JPH0576785B2 - - Google Patents

Info

Publication number
JPH0576785B2
JPH0576785B2 JP58065433A JP6543383A JPH0576785B2 JP H0576785 B2 JPH0576785 B2 JP H0576785B2 JP 58065433 A JP58065433 A JP 58065433A JP 6543383 A JP6543383 A JP 6543383A JP H0576785 B2 JPH0576785 B2 JP H0576785B2
Authority
JP
Japan
Prior art keywords
insulating film
semiconductor substrate
capacitor plate
misfet
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58065433A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59191374A (ja
Inventor
Hisao Katsuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58065433A priority Critical patent/JPS59191374A/ja
Publication of JPS59191374A publication Critical patent/JPS59191374A/ja
Publication of JPH0576785B2 publication Critical patent/JPH0576785B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP58065433A 1983-04-15 1983-04-15 半導体集積回路装置 Granted JPS59191374A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58065433A JPS59191374A (ja) 1983-04-15 1983-04-15 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58065433A JPS59191374A (ja) 1983-04-15 1983-04-15 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS59191374A JPS59191374A (ja) 1984-10-30
JPH0576785B2 true JPH0576785B2 (en]) 1993-10-25

Family

ID=13286966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58065433A Granted JPS59191374A (ja) 1983-04-15 1983-04-15 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS59191374A (en])

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5237528A (en) * 1982-11-04 1993-08-17 Hitachi, Ltd. Semiconductor memory
DE3565339D1 (en) * 1984-04-19 1988-11-03 Nippon Telegraph & Telephone Semiconductor memory device and method of manufacturing the same
JPS61212055A (ja) * 1985-03-18 1986-09-20 Oki Electric Ind Co Ltd 半導体記憶装置
JP2604705B2 (ja) * 1985-04-03 1997-04-30 松下電子工業株式会社 Ｍｏｓキヤパシタの製造方法
JPH0810753B2 (ja) * 1985-10-07 1996-01-31 沖電気工業株式会社 半導体記憶装置の製造方法
EP0236089B1 (en) * 1986-03-03 1992-08-05 Fujitsu Limited Dynamic random access memory having trench capacitor
US5182227A (en) * 1986-04-25 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
US6028346A (en) * 1986-04-25 2000-02-22 Mitsubishi Denki Kabushiki Kaisha Isolated trench semiconductor device
DE3932683A1 (de) * 1989-09-29 1991-04-11 Siemens Ag Verfahren zur herstellung eines grabenkondensators einer ein-transistor-speicherzelle in einem halbleitersubstrat mit einer selbstjustierten kondensator-gegenelektrode
US5075817A (en) * 1990-06-22 1991-12-24 Ramtron Corporation Trench capacitor for large scale integrated memory

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856266B2 (ja) * 1977-02-03 1983-12-14 テキサス インスツルメンツ インコ−ポレイテツド Ｍｏｓメモリ
JPS583260A (ja) * 1981-06-29 1983-01-10 Fujitsu Ltd 竪型埋め込みキヤパシタ
JPH065713B2 (ja) * 1982-06-07 1994-01-19 日本電気株式会社 半導体集積回路装置
JPS59141262A (ja) * 1983-02-02 1984-08-13 Nec Corp 半導体メモリセル

Also Published As

Publication number Publication date
JPS59191374A (ja) 1984-10-30

Similar Documents

Publication Publication Date Title
KR920007331B1 (ko) 반도체 기억장치 및 그 제조방법
JPH0342514B2 (en])
JP2906807B2 (ja) 半導体メモリセルとその製造方法
JPH073858B2 (ja) 半導体装置の製造方法
JP2621181B2 (ja) Ｍｉｓ型半導体記憶装置
US6188099B1 (en) Storage capacitor structure
JPH0576785B2 (en])
JPS6145390B2 (en])
JP2941039B2 (ja) 半導体メモリ装置の製造方法
US5010379A (en) Semiconductor memory device with two storage nodes
JPS6155258B2 (en])
JPH0640573B2 (ja) 半導体集積回路装置
US4388121A (en) Reduced field implant for dynamic memory cell array
JPH0673368B2 (ja) 半導体記憶装置およびその製造方法
US6181014B1 (en) Integrated circuit memory devices having highly integrated SOI memory cells therein
JP2574231B2 (ja) 半導体メモリ装置
JP2936659B2 (ja) ダイナミック型メモリ装置
JPH077823B2 (ja) 半導体集積回路装置
JPS62137863A (ja) 半導体メモリ装置
JPS61107768A (ja) 半導体記憶装置
JPS61140172A (ja) 半導体記憶装置
JP2554332B2 (ja) １トランジスタ型ダイナミツクメモリセル
JP2702702B2 (ja) 半導体記憶装置
JPS61199657A (ja) 半導体記憶装置
JPH0691216B2 (ja) 半導体記憶装置